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Bulletin of Abai KazNPU. Series of Physical and mathematical sciences
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Vol. 85 No. 1 (2024)

SELECTIVE AMMONIA SENSOR BASED ON POROUS SILICON - TUNGSTEN OXIDE HETEROSTRUCTURE

Published March 2024

86

92

M. Ibraimov+−
al-Farabi Kazakh National University, Almaty
https://orcid.org/0000-0002-8049-3911
B. Khaniyev+−
al-Farabi Kazakh National University, Almaty
T Duisebayev +−
al-Farabi Kazakh National University, Almaty
A. Tileu+−
al-Farabi Kazakh National University, Almaty
D Almen+−
al-Farabi Kazakh National University, Almaty
al-Farabi Kazakh National University, Almaty
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M. Ibraimov

Head of the Department of Solid State Physics and Nonlinear Physics, PhD, Acting Professor

al-Farabi Kazakh National University, Almaty
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B. Khaniyev

PhD, Senior Lecturer Department of Solid State Physics and Nonlinear Physics

al-Farabi Kazakh National University, Almaty
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T Duisebayev

Senior Lecturer, Department of Solid State Physics and Nonlinear Physics

al-Farabi Kazakh National University, Almaty
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A. Tileu

Lecturer, Department of Solid State Physics and Nonlinear Physics

al-Farabi Kazakh National University, Almaty
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D Almen

Lecturer, Department of Solid State Physics and Nonlinear Physics

DOI: 10.51889/2959-5894.2024.85.1.007
Abstract

In this work, a gas sensor was fabricated based on a heterostructural material consisting of porous silicon and tungsten oxide. Porous silicon was obtained by electrochemical etching, and porous silicon/WO3 material was obtained by magnetron sputtering. The electrical and morphological characteristics of the obtained material and its sensitivity to various gases have been studied. Experimental work has shown that among several types of gas obtained as a sample, the specified gas sensor has a high sensitivity to ammonia molecules, respectively, the material under study can be used as a selective ammonia sensor.

pdf (Русский)
Keywords
semiconductor heterostructure porous silicon tungsten oxide gas sensor ammonia electrochemical etching magnetron sputtering
Language

Русский

How to Cite

[1]
Ibraimov М., Khaniyev Б., Duisebayev Т., Tileu А. and Almen Д. 2024. SELECTIVE AMMONIA SENSOR BASED ON POROUS SILICON - TUNGSTEN OXIDE HETEROSTRUCTURE. Bulletin of Abai KazNPU. Series of Physical and mathematical sciences. 85, 1 (Mar. 2024), 72–79. DOI:https://doi.org/10.51889/2959-5894.2024.85.1.007.