In this work, a gas sensor was fabricated based on a heterostructural material consisting of porous silicon and tungsten oxide. Porous silicon was obtained by electrochemical etching, and porous silicon/WO3 material was obtained by magnetron sputtering. The electrical and morphological characteristics of the obtained material and its sensitivity to various gases have been studied. Experimental work has shown that among several types of gas obtained as a sample, the specified gas sensor has a high sensitivity to ammonia molecules, respectively, the material under study can be used as a selective ammonia sensor.
SELECTIVE AMMONIA SENSOR BASED ON POROUS SILICON - TUNGSTEN OXIDE HETEROSTRUCTURE
Published 03-2024
Abstract
Language
Рус
Keywords
semiconductor
heterostructure
porous silicon
tungsten oxide
gas sensor
ammonia
electrochemical etching
magnetron sputtering
How to Cite
[1]
Ибраимов, М., Ханиев, Б., Дуйсебаев, Т., Тілеу, А. and Әлмен, Д. 2024. SELECTIVE AMMONIA SENSOR BASED ON POROUS SILICON - TUNGSTEN OXIDE HETEROSTRUCTURE. Bulletin of the Abai KazNPU, the series of "Physical and Mathematical Sciences". 85, 1 (Mar. 2024), 72–79. DOI:https://doi.org/10.51889/2959-5894.2024.85.1.007.